Key Work
“Stress-Corrosion Cracking of Low Dielectric-Constant Spin-On Glass Thin Films,” R.F. Cook and E.G. Liniger, J. Electrochem. Soc., 146 (1999) 4439-4448.
Topical Works
- “Stochastic Behavior of Nanoscale Dielectric Wall Buckling,” L.H. Friedman, I. Levin, and R.F. Cook, J. Appl. Phys. 119 (2016) 114305-1-12.
- “Indentation fracture of low-dielectric constant films, Part I. Experiments and observations,” D.J. Morris and R.F. Cook, J. Mater. Res. 23 (2008) 2429-2442.
- “Indentation fracture of low-dielectric constant films, Part II. Indentation fracture mechanics model,” D.J. Morris and R.F. Cook, J. Mater. Res. 23 (2008) 2443-2457. (covered in The Engineer magazine) and PhysOrg online)
- “Organosilicate Spin-On Glasses: I, Effect of Chemical Modification on Mechanical Properties,” S. Kim, Y. Toivola, R.F. Cook, K. Char, S.H. Chu, J.-K Lee, D.Y. Yoon and H.-W. Rhee, J. Electrochem. Soc. 151 (2004) F37-F44.
- “Organosilicate Spin-On Glasses: II, Effect of Physical Modification on Mechanical Properties,” Y. Toivola, S. Kim, R.F. Cook, K. Char, J.-K Lee, D.Y. Yoon, H.-W. Rhee, S.Y. Kim and M.Y. Jin, J. Electrochem. Soc. 151 (2004) F45-F53.
- “Structure, Electrical, and Mechanical Properties Development During Curing of Low-k Hydrogen Silsesquioxane Films,” Y. Toivola, J. Thurn, and R.F. Cook, J. Electrochem. Soc. 149 (2002) F9-F17.
- (Invited) Phase-Separated Inorganic-Organic Hybrids for Microelectronic Applications,” R.D. Miller, J.L. Hedrick, D.Y. Yoon, R.F. Cook, and J.P. Hummel, MRS Bulletin, 22 (1997) 44-48.
- “Polymeric Organic-Inorganic Hybrid Nanocomposites: Preparation of Polyimide Modified Poly(silsesquioxane) using Functionalized Poly(amic acid alkyl ester) Precursors,” J.L. Hedrick, H.-J. Cha, R.D. Miller, D.Y. Yoon, H.R. Brown, S. Srinivasan, R. Di Pietro, R.F. Cook, J.P. Hummel, D.P. Klaus, E.G. Liniger and E.E. Simonyi, Macromolecules 30 (1997) 8512-8515.
- “Nanoscopically Engineered Organic-Inorganic Hybrids as Low Dielectric Constant, High Modulus Insulating Materials for Microelectronic Applications,” J.L. Hedrick, R.D. Miller, D. Yoon, H.-J. Cha, H.R. Brown, S.A. Srinivasan, R. Di Pietro, V. Flores, J.P. Hummel, R.F. Cook, E.G. Liniger, E.E. Simonyi and D.P. Klaus, ACS Polymer Preprints 38 (1997) 985-986.
- “Process for Manufacture of Integrated Circuit Device,” C.J. Hawker, W. Volksen, J.L. Hedrick, K. Carter, D.Y. Yoon, R.D. Miller, S. Kim, M.A. Harbison, R.F. Cook and E.G. Liniger, United States Patent, 5,953,627 (September, 1999)
- “Process for Manufacture of Integrated Circuit Device,” C.J. Hawker, W. Volksen, J.L. Hedrick, J.L. Lee, K. Carter, D.Y. Yoon, R.D. Miller, M.A. Harbison, R.F. Cook and E.G. Liniger, United States Patent 6,177,360 (January, 2001).
- “Interim Oxidation of Silsesquioxane Dielectric for Dual Damascene Process,” R.F. Cook, S.E. Greco, J.P. Hummel, J. Liu, V.J. McGahay, R. Mih and K. Srivastava, United States Patent, 6,329,280 B1 (December, 2001).
- “In Situ Formation of Protective Layer on Silsesquioxane Dielectric for Dual Damascene Process,” R.F. Cook, S.E. Greco, J.P. Hummel, J. Liu, V.J. McGahay, R. Mih and K. Srivastava, United States Patent, 6,348,736 (February, 2002).
- “Interim Oxidation of Silsesquioxane Dielectric for Dual Damascene Process,” R.F. Cook, S.E. Greco, J.P. Hummel, J. Liu, V.J. McGahay, R. Mih and K. Srivastava, United States Patent, 6,479,884 B2 (November, 2002).
Fracture 